The FT24C64B series are 65,536 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 8192 words of 8 bits (one byte) each. They offer an additional page (Identification Page) of 32 bytes. They also provide the Write Device Address instruction for users to implement configurable device address features. The devices are fabricated with proprietary advanced CMOS process for low power and low voltage applications. The device features programmable software write protection which provides partial as well as full memory array protection. These devices are available in thin 4-ball WLCSP package. A standard 2-wire serial interface is used to address all read and write functions. Our extended VCC range (1.7V to 5.5V) devices enables wide spectrum of applications.
Low voltage and low power operations:
FT24C64B: VCC = 1.7V to 5.5V
32 bytes page write mode.
Partial page write operation allowed.
Internally organized: 8,192 × 8 (64K).
Configurable device address.
Programmable Software Write protect:
Upper quarter memory array
Upper half memory array
Upper 3/4 memory array
Whole memory array
Standard 2-wire bi-directional serial interface.
Schmitt trigger, filtered inputs for noise protection.
Self-timed Write Cycle (5ms maximum).
1000 kHz (5.5V, 2.5V), 400 kHz (1.7V) Compatibility.
Automatic erase before write operation.
High reliability: typically 1,000,000 cycles endurance.
100 years data retention.
Industrial temperature range (-40℃ to 85℃).
Standard CSP Pb-free packages.
|規格書||Part No.： FT24C64B||版本： C4||添加時間： 2019-07-22||支持型號： FT24C64B-EXX||附件： ft24c64b-c4(d).pdf|